| 摘要 |
A method of manufacturing a semiconductor device whereby a photoresist layer (3) is provided on a surface (1) of a slice of semiconductor material (2), after which two photomasks (4, 5; 50, 51; 60, 61; 70, 71) corresponding to adjoining portions of a pattern (6) to be formed in the photoresist are projected on the photoresist by means of a projection lens, with overlapping edges (7, 8). Strip-shaped transparent end portions (10, 11; 52, 53; 62, 63; 72, 73) of the two photomasks which are situated within this edge and which overlap one another in projection are provided with strip-shaped connection patterns (30; 54, 55; 64, 65; 74, 75) which overlap one another in projection and which exhibit a complementary transmittance in projection. To keep the quantity of computer data necessary for describing the photomasks comparatively small, the strip-shaped transparent end portions of the two photomasks overlapping one another in projection are provided at their edges only with strip-shaped connection patterns overlapping one another in projection. <IMAGE> |
