METHOD FOR PRODUCING THIN SUBSTRATE LAYERS

摘要

The invention relates to a method for producing very thin substrate layers, especially thin semiconductor regions, which can contain integrated circuits. According to the invention, two substrates (1, 2) are joined with the front sides thereof by means of one or more intermediate joining layers (3, 4). At least one of the joining layers or the front side of one of the substrates is structured beforehand such that channel-shaped recesses (5) are formed which permit an etching agent to penetrate in a lateral manner. The resulting wafer stack is thinned from one side until the desired layer thickness is obtained. Finally, this thin layer is removed from the remaining substrate by introducing the etching agent into the channel-shaped recesses. This removal process is an economical, wet chemical process which does not jeopardize the chip and the added-value integrated thereon.