发明名称 Framställning av metallkarbidskikt med fullerener som kolkälla
摘要 The preparation of at least one epitaxial metal carbide layer on a substrate comprises reacting a carbon source with a metal (e.g. metal atoms obtained by vaporisation or sputtering) so that fullerenes and metal atoms are adsorbed onto the substrate surface and react chemically with each other to form a metal carbide layer. A flux of (preferably solid, e.g. powdered) fullerenes is used and the reaction temperature is relatively low, preferably at ca. 400 deg. C. - Preferably a magnesia substrate is used. The metals used are titanium, molybdenum, tungsten or hafnium to form the corresponding metal carbide layers.
申请公布号 SE9604415(L) 申请公布日期 1998.05.30
申请号 SE19960004415 申请日期 1996.11.29
申请人 NORIN LARS;MC GINNIS SEAN;JANSSON ULF;CARLSSON JAN OTTO 发明人 NORIN LARS;GINNIS SEAN MC;JANSSON ULF;CARLSSON JAN-OTTO
分类号 C23C;C23C14/06;C30B29/36;(IPC1-7):C23C14/06 主分类号 C23C
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