发明名称 |
Framställning av metallkarbidskikt med fullerener som kolkälla |
摘要 |
The preparation of at least one epitaxial metal carbide layer on a substrate comprises reacting a carbon source with a metal (e.g. metal atoms obtained by vaporisation or sputtering) so that fullerenes and metal atoms are adsorbed onto the substrate surface and react chemically with each other to form a metal carbide layer. A flux of (preferably solid, e.g. powdered) fullerenes is used and the reaction temperature is relatively low, preferably at ca. 400 deg. C. - Preferably a magnesia substrate is used. The metals used are titanium, molybdenum, tungsten or hafnium to form the corresponding metal carbide layers. |
申请公布号 |
SE9604415(L) |
申请公布日期 |
1998.05.30 |
申请号 |
SE19960004415 |
申请日期 |
1996.11.29 |
申请人 |
NORIN LARS;MC GINNIS SEAN;JANSSON ULF;CARLSSON JAN OTTO |
发明人 |
NORIN LARS;GINNIS SEAN MC;JANSSON ULF;CARLSSON JAN-OTTO |
分类号 |
C23C;C23C14/06;C30B29/36;(IPC1-7):C23C14/06 |
主分类号 |
C23C |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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