NON-VOLATILE SRAM

摘要

PURPOSE: A nonvolatile static memory device is provided to improve an operating speed of a device by adding a nonvolatile characteristic to a static memory device. CONSTITUTION: A nonvolatile static memory device is formed by adding a nonvolatile characteristic to a static memory device comprising a drive element(16), a load element(17), and an access element(19). A boron implanted layer is formed on both sides of a silicon substrate. A floating gate and a control gate are formed on the silicon substrate. A tunneling oxide layer is formed at a lower portion of the floating gate. The nonvolatile characteristic is added to the static memory device by using a difference of threshold voltages according to a charge stored in the floating gate.