| 摘要 |
PURPOSE: A non-volatile memory device and a method for manufacturing the same are provided to substantially obviate one or more of the problems due to limitations and disadvantages of the related art by providing an enough channel length of a transistor to suppress a leakage current caused by an over-erasure, and be able to reduce a transistor area on a certain plane in a cell for high packing density of the cells. CONSTITUTION: Providing a substrate(21), simultaneously a protruding portion extending from the substrate and a floating gate(23a) over the protruding portion are formed, wherein the protruding portion has first and second sides. Then, first impurity regions in the substrate and second impurity regions are formed both in the substrate(21) and the second side of the protruding portion. Here, the first and second impurity regions act as source and drain regions, respectively, wherein the first and second impurity regions at the same side of the projection are directly adjacent to each other, and the second impurity region has an impurity concentration higher than the first impurity region. Finally, a control gate(30) is formed over the floating gate(23a).
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