EPITAXIAL LAYER STRUCTURE OF MONOLITHIC MICROWAVE DEVICE

摘要

PURPOSE: A structure of an epitaxial substrate for a single chip microwave device is provided to improve the electrical characteristic of an interfacial surface and a metal by preventing an oxide layer from being formed in the interfacial surface between the epitaxial substrate and the metal. CONSTITUTION: A structure of an epitaxial substrate(1) comprises the first substrate including a buffer layer(2) having a thickness of 1 micrometer for obtaining the resistance higher than the resistance of the epitaxial substrate(1), an active layer(3) capable of forming a channel, and a cap layer(4) doped with impurities. The second substrate is formed on the first substrate. The second substrate includes the first metal layer(5), a dielectric layer(6) which is grown on the first metal layer(5), and the second metal layer(7) which is made of metal identical to the first metal layer(5). The dielectric layer(6) consists of AlAs so that the dielectric layer(6) can be formed through a sequence process.