| 摘要 |
PURPOSE: A method for improving the sensitivity of a find target is provided to save the testing time and to reduce the testing coast by forming the target point in a scribe lane when a semiconductor device manufacturing process is carried out. CONSTITUTION: A find target point(13) is formed in a scribe lane area(12) of a wafer. The find target point(13) is positioned adjacent to an edge of a chip area. In order to form the find target point(13) in the scribe lane area(12), the first insulating layer(21) is formed on the entire surface of the wafer and the second insulating layer(22) is deposited on the first insulating layer(21). After coating photoresist on the second insulating layer(22), the photoresist is patterned such that the second insulating layer(22) is exposed. Then, the second and first insulating layers(22,21) are sequentially removed by performing an etching process. When the photoresist is patterned, a sufficient margin is achieved at both sides of the find target point(13).
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