| 发明名称 |
INSULATING STRUCTURES OF BURIED LAYERS WITH BURIED TRENCHES AND METHOD FOR MAKING SAME |
| 摘要 |
The invention concerns an integrated circuit semiconductor substrate comprising at least a dielectrically vertical buried trench and having a height at least five times more than its width, and an epitaxial semiconductor layer (6) covering said trench laterally separating two regions (4, 5). The invention is applicable to MOS, CMOS and BICMOS technologies. The invention also concerns a method for making said substrate.
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| 申请公布号 |
WO02056363(A1) |
申请公布日期 |
2002.07.18 |
| 申请号 |
WO2002FR00055 |
申请日期 |
2002.01.09 |
| 申请人 |
STMICROELECTRONICS SA;MENUT, OLIVIER |
发明人 |
MENUT, OLIVIER |
| 分类号 |
H01L21/76;H01L21/762;H01L21/8222;H01L21/8234;H01L21/8238;H01L21/8248;H01L21/8249;H01L27/06;H01L27/08;H01L27/092;(IPC1-7):H01L21/762;H01L21/74;H01L21/824;H01L21/823 |
主分类号 |
H01L21/76 |
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