发明名称 |
Robust via structure and method |
摘要 |
A conductive line is formed in a first insulating layer. A second insulating layer is formed over the conductive line and the first insulating layer. A via extends through the second insulating layer to contact at least the top surface of the conductive line. The via also extends through the first insulating layer to contact at least a top portion of at least one sidewall of the conductive line. The conductive line sidewall may include an outwardly extending hook region, so that a portion of the via is disposed beneath the conductive line hook region, forming a locking region within the via proximate the conductive line hook region.
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申请公布号 |
US6806579(B2) |
申请公布日期 |
2004.10.19 |
申请号 |
US20030364190 |
申请日期 |
2003.02.11 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
COWLEY ANDY;STETTER MICHAEL;KALTALIOGLU ERDEM |
分类号 |
H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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