| 摘要 |
A semiconductor device and a method for manufacturing the same are provided to obtain reliability improved capacitive element by reducing remarkably the generation of a leakage current using a crystalline dielectric film with a discontinuous plane. A semiconductor device(1) includes a crystalline dielectric film of perovskite structure. The crystalline dielectric film is arranged at a portion between first and second electrodes(20,40). The crystalline dielectric film includes a discontinuous plane(33) at a pillar type crystal portion. An upper portion on the discontinuous plane in the crystalline dielectric film has a crystalline structure. The crystalline structure has a thickness of 20 nm or more. The total thickness of the crystalline dielectric film is in the range of 200 nm or less.
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