| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable method of forming a contact plug for preventing short-circuiting between the contact plug and a word line or between the contact plug and a bit line by using a material having an etching speed ratio of 100 or larger for etching speed of a silicon oxide film as an interlayer film forming the self-aligned contact plug. SOLUTION: The method includes steps of: forming a line 105b having an upper surface and a side face covered with the silicon oxide film; then forming a sacrifice interlayer film 132a made of an organic application film for covering the line and not containing silicon on an entire surface; and etching the sacrifice interlayer film and a lower layer insulation film sequentially to form a contact hole 108, thereby forming the contact plug. The method further includes steps of: thereafter removing the sacrifice interlayer film to form a column of the contact plug, forming an interlayer insulation film 106 thereon; and partially removing the interlayer insulation film from the surface to expose the surface of the capacitive contact plug from the surface. COPYRIGHT: (C)2008,JPO&INPIT |
