| 摘要 |
An internal voltage generating circuit of a semiconductor memory device is provided to improve a response characteristic in case of a writing operation, thereby advancing internal voltage generating timing. A driving controller(100) produces a sensing signal by comparing levels of a distribution voltage and a reference voltage in response to an enable signal. The driving controller enables a driving signal in response to the enable signal and a write signal. A first driving unit(200) drives an external voltage according to an electric potential level of the sensing signal, and outputs a first output voltage to an internal voltage output node. A second driving unit(300) drives the external voltage according to the potential level of the sensing signal when the driving signal is enabled, and outputs a second output voltage. |
