发明名称 |
Power semiconductor device |
摘要 |
A plurality of cell structures of a vertical power device are formed at a semiconductor substrate (1). One cell structure included in the plurality of cell structures and located in a central portion CR of the main surface has a lower current carrying ability than the other cell structure included in the plurality of cell structures and located in an outer peripheral portion PR of the main surface. This provides a power semiconductor device having a long power cycle life. |
申请公布号 |
EP2124257(A1) |
申请公布日期 |
2009.11.25 |
申请号 |
EP20090003307 |
申请日期 |
2009.03.06 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
YAMAGUCHI, HIROSHI |
分类号 |
H01L29/739;H01L23/34;H01L23/49;H01L23/495;H01L25/07;H01L29/08;H01L29/10;H01L29/78 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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