High-voltage metal-oxide-semiconductor transistor device and manufacturing method thereof

摘要

A high-voltage metal-oxide-semiconductor (HV MOS) transistor device and a manufacturing method thereof are provided. The HV MOS transistor device includes a semiconductor substrate, a gate structure, a first sub-gate structure, and a drain region. The gate structure is disposed on the semiconductor substrate. The semiconductor substrate has a first region and a second region respectively disposed on two opposite sides of the gate structure. The first sub-gate structure is disposed on the semiconductor substrate, the first sub-gate structure is separated from the gate structure, and the first sub-gate structure is disposed on the first region of the semiconductor substrate. The drain region is disposed in the first region of the semiconductor substrate. The drain region is electrically connected to the first sub-gate structure via a first contact structure disposed on the drain region and the first sub-gate structure.

主权项

1. A high-voltage metal-oxide-semiconductor (HV MOS) transistor device, comprising:
a semiconductor substrate; a gate structure disposed on the semiconductor substrate, wherein the semiconductor substrate has a first region and a second region respectively disposed on two opposite sides of the gate structure; a first isolation structure disposed in the first region of the semiconductor substrate; a first sub-gate structure disposed on the semiconductor substrate, wherein the first sub-gate structure is separated from the gate structure, and the first sub-gate structure is disposed on the first isolation structure in the first region of the semiconductor substrate; and a drain region disposed in the first region of the semiconductor substrate, wherein the drain region is electrically connected to the first sub-gate structure via a first contact structure disposed on the drain region and the first sub-gate structure, and at least a part of the first isolation structure is disposed between the drain region and the first sub-gate structure.