Semiconductor device

摘要

A semiconductor device includes an n-type semiconductor substrate, which has a main surface having an element region and an outer peripheral region surrounding the element region; a p-type guard ring, which includes: a lowly-doped p-type region disposed on an upper surface of the semiconductor substrate in the outer peripheral region surrounding the element region; and a highly-doped p-type region disposed on an inner side of the lowly-doped p-type region and having an impurity concentration higher than an impurity concentration of the lowly-doped p-type region, wherein a side surface and a bottom surface of the highly-doped p-type region are covered by the lowly-doped p-type region such that the highly-doped p-type region is not in contact with the n-type region; and an ohmic junction electrode, which forms an ohmic junction with the highly-doped p-type region.

主权项

1. A semiconductor device comprising:
an n-type semiconductor substrate, which has a main surface having an element region and an outer peripheral region surrounding the element region; a p-type guard ring, which includes:
a lowly-doped p-type region disposed on an upper surface of the semiconductor substrate in the outer peripheral region surrounding the element region; anda highly-doped p-type region disposed on an inner side of the lowly-doped p-type region and having an impurity concentration higher than an impurity concentration of the lowly-doped p-type region, wherein a side surface and a bottom surface of the highly-doped p-type region are covered by the lowly-doped p-type region such that the highly-doped p-type region is not in contact with the n-type region of the semiconductor substrate; an ohmic junction electrode, which forms an ohmic junction with the highly-doped p-type region; and a Schottky junction electrode, which is disposed on the upper surface of the element region and forms a Schottky junction with the semiconductor substrate, wherein the ohmic junction electrode is disposed on the upper surface of the Schottky junction electrode.