发明名称 Semiconductor Stripe Laser
摘要 A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm2. A second electrical contact is located on the second semiconductor region and on an electrical contact structure for external electrical contacting. An electrical passivation layer is provided in certain places on the stripe waveguide. A thermal insulation apparatus is located between the second electrical contact and the active zone and/or on the stripe waveguide.
申请公布号 US2016211646(A1) 申请公布日期 2016.07.21
申请号 US201514704532 申请日期 2015.05.05
申请人 OSRAM Opto Semiconductors GmbH 发明人 Avramescu Adrian Stefan;Vierheilig Clemens;Eichler Christoph;Lell Alfred;Mueller Jens
分类号 H01S5/042;H01S5/024;H01S5/22 主分类号 H01S5/042
代理机构 代理人
主权项 1. A semiconductor stripe laser comprising: a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type that is different than the first conductivity type; an active zone configured to generate laser radiation, the active zone located between the first semiconductor region and the second semiconductor region; a stripe waveguide formed in the second semiconductor region, arranged to guide waves in a one-dimensional manner, and arranged for a current density of at least 0.5 kA/cm2; a first electrical contact on the first semiconductor region; a second electrical contact on the second semiconductor region and on an electrical contact structure for external electrical contacting of the semiconductor stripe laser; an electrical passivation layer provided in certain places on the stripe waveguide; and a thermal insulation apparatus located between the second electrical contact and the active zone and/or on the stripe waveguide, a width of the stripe waveguide in a narrowed portion amounting at most to 80 percent of a total width of the stripe waveguide, wherein a top face of the stripe waveguide is broader than the narrowed portion when seen in a sectional view.
地址 Regensburg DE
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