发明名称 SEMICONDUCTOR LASER APPARATUS AND MANUFACTRUING METHOD THEREOF
摘要 A semiconductor laser apparatus includes a silicon-on-insulator assembly and an edge-emitting semiconductor laser assembly integrated on the silicon-on-insulator assembly. The silicon-on-insulator assembly includes an optical waveguide at the top which is bonded to the edge-emitting semiconductor laser assembly and configured to couple a laser light emitted from the edge-emitting semiconductor laser assembly, and the optical waveguide includes a core portion located in the middle of the optical waveguide; and at least one vertical rib configured on two sides of the core portion respectively, with a width narrower than that of the core portion. The apparatus obtains a single mode laser operation and has low propagation loss and high mechanical bond strength.
申请公布号 US2016211645(A1) 申请公布日期 2016.07.21
申请号 US201514600443 申请日期 2015.01.20
申请人 SAE Magnetics (H.K.) Ltd. 发明人 PADULLAPARTHI Babu Dayal
分类号 H01S5/022;G02B6/136;H01S5/125;H01S5/02;H01S5/34;H01S5/12;G02B6/42;G02B6/122 主分类号 H01S5/022
代理机构 代理人
主权项 1. A semiconductor laser apparatus, comprising: a silicon-on-insulator assembly; and an edge-emitting semiconductor laser assembly integrated on the silicon-on-insulator assembly; the silicon-on-insulator assembly comprising an optical waveguide at the top which is bonded to the edge-emitting semiconductor laser assembly and configured to couple a laser light emitted from the edge-emitting semiconductor laser assembly, wherein the optical waveguide comprises: a core portion located in the middle of the optical waveguide; and at least one vertical rib configured on two sides of the core portion respectively, with a width narrower than that of the core portion.
地址 Hong Kong CN