发明名称 PRODUCTION OF CHEMICAL VAPOR PHASE VAPOR DEPOSITED SILICON CARBIDE MATERIAL
摘要 PROBLEM TO BE SOLVED: To obtain a CVD-SiC material showing extremely small warpage with high production yield by forming a SiC coating layer on the surface of a substrate by CVD method, slicing the obtd. body at the center part in the horizontal direction to obtain half bodies, and removing only the substrate part from the half body to leave only the SiC coating layer. SOLUTION: The figure shows the schematic system for the production of a CVD-SiC material. A vitreous carbon bulk material 11 is subjected to normal CVD treatment to form a CVD-SiC coating layer 12. The peripheral part of the treated member 13 is cut and the center part of the member 13 in the thickness direction is sliced into two half bodies 14. Since the bulk material 11 has a dense structure, the CVD-SiC coating layer 12 is weakly adhered to the bulk material 11 with the interface 20. Therefore, the CVD-SiC coating layer 12a in naturally separated form the bulk material 11. Each of the obtd. two CVD-SiC coating layers 12 is subjected to a surface finishing process to obtain a bulk material 15.
申请公布号 JPH10167830(A) 申请公布日期 1998.06.23
申请号 JP19960335252 申请日期 1996.12.16
申请人 TOYO TANSO KK 发明人 HIRANO HIROYUKI
分类号 C04B35/565;B28B1/30;C01B31/36 主分类号 C04B35/565
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