发明名称 DUMMY WAFER FOR PLASMA ETCHING
摘要 PROBLEM TO BE SOLVED: To obtain a dummy wafer less liable to consumption, generating no particles and undergoing consumption at a uniform etching rate by using a glassy carbon material contg. a certain amt. of Si dispersed in the texture of glassy carbon. SOLUTION: This dummy wafer is made of a glassy carbon material contg. 0.1-10wt.% Si dispersed in the texture of glassy carbon. The dispersed Si reinforces the brittle texture of the glassy carbon, prevents the falling of particles and inhibits the reaction of carbon with reactive gas. Silicon alkoxide contg. a single Si atom in one molecule is added to an org. solvent to <=50vol.% concn., a proper amt. of wafer is added and they are mixed with a thermosetting resin such as phenolic resin. The resultant dispersion is degassed and cured by heating to form a formed body. This formed body is fired at 1,000-2,500 deg.C in a nonoxidizing atmosphere to convert the thermosetting resin into glassy carbon by carbonization.
申请公布号 JPH10167828(A) 申请公布日期 1998.06.23
申请号 JP19960338943 申请日期 1996.12.04
申请人 TOKAI CARBON CO LTD 发明人 FUJITSUKA KUNIHIRO
分类号 C04B35/52;H01L21/302 主分类号 C04B35/52
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