| 摘要 |
A solid-state imaging device has a semiconductor layer, a photoelectric conversion device, floating diffusion, a plurality of gates, and a semiconductor area. The photoelectric conversion device is installed on the semiconductor layer. The floating diffusion is installed at a thin location of a surface side of one side on the semiconductor layer. The plurality of gates are individually installed adjacently to the floating diffusion, and elongated in the depth direction of the semiconductor layer toward the photoelectric conversion device. The semiconductor area is installed between the gates to face the floating diffusion. According to an embodiment of the present invention, the solid-state imaging device can improve a characteristic of transmitting a signal electric charge to the floating diffusion from the photoelectric conversion device. |
