SEMICONDUCTOR DEVICE

摘要

Provided is a technology for further reducing a loss in a semiconductor device including a semiconductor substrate in which an IGBT region and a diode region are provided. This semiconductor device includes a semiconductor substrate in which at least one IGBT region and at least one diode region are provided. The IGBT region and the diode region are adjacent to each other in a predetermined direction in a plan view of the semiconductor substrate. In the plan view of the semiconductor substrate, a first boundary plane where the collector region and the cathode region are adjacent is shifted from a second boundary plane where the IGBT region and the diode region are adjacent on the front surface side of the semiconductor substrate either in a direction from the cathode region toward the collector region or in a direction from the collector region toward the cathode region.

主权项

1. A semiconductor device comprising a semiconductor substrate in which at least one IGBT region and at least one diode region are provided, wherein
the IGBT region comprises: a first conductivity type emitter region disposed in an area exposed on a front surface of the semiconductor substrate; a second conductivity type base region surrounding the emitter region and in contact with the emitter region; a first conductivity type first drift region disposed on a back surface side of the semiconductor substrate with respect to the base region, and being separated from the emitter region by the base region; a gate electrode disposed in a trench penetrating the base region to extend to the first drift region, and facing a part of the base region which separates the emitter region from the first drift region; an insulating body disposed between the gate electrode and an inner wall of the trench; and a second conductivity type collector region disposed in an area exposed on a back surface of the semiconductor substrate, the diode region comprises: a second conductivity type anode region disposed in an area exposed on the front surface of the semiconductor substrate; a first conductivity type second drift region disposed on the back surface side of the semiconductor substrate with respect to the anode region; and a first conductivity type cathode region disposed in an area exposed on the back surface of the semiconductor substrate; the IGBT region and the diode region are adjacent to each other in a plan view of the semiconductor substrate, in the plan view of the semiconductor substrate, a first boundary plane where the collector region and the cathode region are adjacent is shifted from a second boundary plane where the IGBT region and the diode region are adjacent on the front surface side of the semiconductor substrate either in a direction from the cathode region toward the collector region or in a direction from the collector region toward the cathode region.