VERTICAL TYPE NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

An embodiment of the present invention relates to a semiconductor apparatus and a manufacturing method thereof and, more specifically, to a vertical channel type memory device including memory cells three-dimensionally arranged and a manufacturing method thereof. According to the embodiment of the present invention, the memory device can have a channel length of several hundred nanometers without a high-priced lithography process and has a vertically stackable structure, thereby implementing a high-integrated organic memory device by a low-priced solution process.