| 摘要 |
PURPOSE:To freely form a capacitor by forming first and second memory capacitors connected to first and second drain regions disposed in a space between parallel bit lines. CONSTITUTION:An opposite conductivity type source region 44 formed on a substrate 40 crosses one bit line 42, and continues between a pair of spaces at both sides of the line 42. Opposite conductivity type source regions 45, 46 are disposed in spaces interposed between the two bit lines 42. An interval l1 between the region 44 and the region 45 and an interval l2 between the region 44 and the region 46 correspond to predetermined channel lengths. A second memory capacitor 48 is disposed in a space interposed between the pair of lines 42 along the arms 41b, 41c of a field region 41. There are capacitor contact holes 49, 49' for connecting the regions 45, 46 to first, second memory capacitors 47, 47. |
