Sputtering material onto a target - using low gas pressure

摘要

The parent claims a process and appts. for sputtering a coating material onto a target in which there is provided a magnetic field of sufficient intensity to ionise the working gas, the magnetic field and the electrode assembly together defining one or more traps for containing all the electrons emitted. At least one electrode is formed of material to be sputtered. The present invention provides a modification of that process and appts. in which the working gas is maintained at a pressure of 10-2 torr or below, and the magnetic field at 300 gauss or below.