| 摘要 |
<p>Method of forming patterns utilizing a photosensitive chalcogenide thin film comprising a lamination layer of amorphous chalcogenide thin film (2) and silver thin film (3). The amorphous chalcogenide thin film (22) of regions which are not exposed to light (6) or an accelerated particle beam and consequently are not doped with silver are removed by means of plasma etching with fluorine gas. According to this process, desired patterns of the amorphous chalcogenide thin film (21) doped with silver are left on a substrate. The remaining patterns are used as an etching mask to form the desired patterns on a substrate layer by a plasma etching method by removing a substrate layer (1C). </p> |
