ELEKTRODESTRUCTUUR VOOR HALF-GELEIDERINRICHTINGEN.

摘要

An electrode structure for use in semiconductor devices comprising: a semiconductive layer; a conductive layer disposed on one surface of the semiconductive layer; first regions which intervene between the layers and serve as passages for transmitting minority carriers from the semiconductive layer to said conductive layer; and second regions which intervene between said layers and serve as passages for conveying majority carriers between the semiconductive layer and conductive layer, the first and second regions being selectively formed on the semiconductive layer so as to be adjacent to one another.