| 摘要 |
PURPOSE:To obtain a composite photosemiconductor device which has high coupling degree between light emitting elements of hetero junction structure by providing a thin film produced with a p-n junction by a reverse bias while isolating the elements and a photoreceptor which receives the output of the light emitting elements on a semiconductor substrate. CONSTITUTION:A light emitting diode 12 of double hetero junction structure and a photoreceptor 13 isolated electrically from the diode 12 and made of a photodiode in which a reversely biased p-n junction and connected in series with the junction between the substrate 11 are formed on an n type GaAs substrate 11. In order to form it, p type GaAs layer 14, p type GaAlAs layer 15, p type GaAs active layer 16, p type GaAlAs layer 17 and p type GaAs layer 18 having an opening 14a are laminated and grown on the substrate 11, a notch 19 cut into the substrate 11 is opened, the diode 12 and the photoreceptor 13 are isolated, and an n<+> type layer 20 which reaches the layer 15 is diffused in the photoreceptor 13. |
