| 摘要 |
PURPOSE:To make it possible to use resist, which is hard to be deformed and peeled, by providing a process for forming a metal film on a substrate including the resist, and providing a process for applying plasma etching, removing the resist and removing the metal film on the resist by lift-off. CONSTITUTION:Resist 12 is applied on a GaAs substrate 11, on which an N<+> layer 10 is formed. Thereafter, ultraviolet rays are applied through a photomask 13 with a line having a width of 4mum being made to remain, and the resist is exposed. Then the device is rinsed and undergoes post-baking. Thus the pattern of the resist 12 is formed. Thereafter with the resist 12 as a mask, a metal film 15 is formed. Plasma etching using oxygen gas is performed, and the resist 12 is removed. Metallic patterns 14 and 15 are made to remain on the substrate 11. When lift-off is performed, a substrate 23 is set on a substrate holding stage 24. Air in a bell jar 16 is sucked through an exhausting pipe 17 and oxygen gas is supplied. A high frequency electric field is formed between electrodes 18 and 18, and oxygen plasma is yielded. Thus, the resist, which is hard to be deformed and peeled with etching liquid, can be used, and the pattern accuracy of the formed metal film is enhanced.
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