Memory with improved write mode to read mode transition

摘要

A memory has a read mode in which data is read from a bit line pair selected by a column address and a write mode in which data is written onto a selected bit line pair. The selected bit line pair is coupled to a data line pair via a column decoder in response to a column address. Upon a transition from the write mode to the read mode the column decoder is disabled from coupling the selected data line to the data line pair for the duration of a column disable pulse. The column disable pulse is generated in response to a write transition pulse or a column transition pulse or both. The column transition pulse is generated in response to a change in the column address. The write transition pulse is generated in response to a write to read transition.