发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent the peeling of the lead wires of a semiconductor device by a method wherein a CVD deposited film under the lower part of each bonding pad is removed to leave a thermal oxide film only and the bonding pad is made a pure Al film. CONSTITUTION:A semiconductor device is constituted by a method wherein a CVD deposited film 3 under the lower part of each bonding pad is removed and an Al film 4 constituting the bonding pad is made a pure Al film. As a result, a wire peeling, which is generated due to a thermal stress at the time of solder packaging, can be prevented.</p>
申请公布号 JPH01232749(A) 申请公布日期 1989.09.18
申请号 JP19880059730 申请日期 1988.03.14
申请人 MATSUSHITA ELECTRON CORP 发明人 SHIOSAKI HIROYUKI
分类号 H01L23/52;H01L21/31;H01L21/3205;H01L21/768;H01L23/522 主分类号 H01L23/52
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