| 摘要 |
<p>PURPOSE:To ensure perfect protection from static electricity as well as measurement and positioning. CONSTITUTION:A depression type MOS transistor is disposed between a short ring 11 and gate bus lines 6 as scanning lines and between the ring 11 and source bus lines 7 as signal lines. This transistor has a structure in which an insulating film and an n<+>-Si layer have been formed so as to cover a control gate bus line 12 laid between the lines 6 or 7 and the ring 11, one end of the Si layer has been connected to the lines 6 or 7 and the other end to the ring 11.</p> |
