Quantum well opto-electronic device contg. disordered regions - uses quantum well materials which do not cause lattice distortion or mismatch due to intermingling of constituents

摘要

The optical semiconductor device contains a quantum well structure with the compsn. (A1xGa1-x)1-zInzPyAS1-y in which x, y and z are between 0 and 1. it also contains a lattice which matches that of InP and barrier layer of the compsn. (A1x'Ga1-x')1-zInzPyAs1-y in which x' has a value of between 1 and x, and which has a lattice which matches the InP lattice. The novelty is that at least part of the quantum well structure is disordered. - The pref. compsn. for the quantum well structure is a quantum well layer of In0.53Ga0.47As and an associated barrier layer of (AlpGa1-p)0.47In0.53As in which p has a value from 0 to 1.