发明名称 |
Method of fabricating a thin film transistor using hydrogen plasma treatment of the gate dielectric/semiconductor layer interface |
摘要 |
A method of fabricating a thin film transistor (TFT) includes the steps of forming a gate conductor on a substrate; depositing a gate dielectric layer of silicon nitride over the gate conductor; treating the exposed silicon nitride on the surface of the gate dielectric layer with a hydrogen plasma at a power level of at least 44 mW/cm2 for at least 5 minutes; depositing a layer of amorphous silicon semiconductor material over the gate dielectric layer; depositing a layer of n+ doped silicon over the treated amorphous silicon surface; depositing a layer of source/drain metallization over the n+ doped layer; and patterning the source/drain metallization and portions of the underlying n+ doped layer to form source and drain electrodes. The deposition of the TFT material layers and the hydrogen plasma treatment is preferably by plasma enhanced chemical vapor deposition.
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申请公布号 |
US5273920(A) |
申请公布日期 |
1993.12.28 |
申请号 |
US19920939746 |
申请日期 |
1992.09.02 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
KWASNICK, ROBERT F.;POSSIN, GEORGE E. |
分类号 |
H01L21/30;H01L29/786;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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