发明名称 |
SINTERED SILICIDE INCORPORATING FUSE-ELEMENT |
摘要 |
A fusible link device disposed on a semiconductor substrate for providing discretionary electrical connections. The fusible link device of the invention includes a silicide layer and a polysilicon layer formed on the silicide layer and has a first un-programmed resistance. The silicide layer agglomerates to form an electrical discontinuity in response to a predetermined programming potential being applied across the suicide layer, such that the resistance of the fusible link device can be selectively increased to a second programmed resistance. |
申请公布号 |
PL325837(A1) |
申请公布日期 |
1998.08.03 |
申请号 |
PL19960325837 |
申请日期 |
1996.09.30 |
申请人 |
INTEL CORP |
发明人 |
BOHR MARK T.;ALAVI MOHSEN |
分类号 |
H01L21/82;H01L23/525;(IPC1-7):H01L29/00;H01L29/44 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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