| 摘要 |
<p>PURPOSE: To reduce a heavy metal contamination to a substrate and make the quality of a semiconductor thin film formed on the substrate good, by covering with quartz a heating source and the portions of their temperatures being increased through the heating source. CONSTITUTION: In a substrate manipulator for performing the substrate heating of the device for forming a semiconductor thin film in a vacuum, a heating source 3 opposed to a substrate 6 and the portions of their temperatures being increased by the heating source 3 are covered with quartz to reduce a heavy metal contamination to the substrate 6. For example, the heating portion of the substrate manipulator has several sheets of thermal shield plates 9 on an SiC heater 3, and is fastened to a thermal insulation plate 10 made of alumina. The thermal insulation plate 10 is fastened to a metallic plate 12 via a spacer 11, and the whole of the heating portion has the structure of it being held by a holder 13. Further, the whole of the heating portion comprising the SiC heater 3 and the thermal shield plates 9, etc., is covered with a quartz cover 5, and the substrate 6 is mounted on a substrate holder 7 made of quartz to be heated by the SiC heater 3 via the quartz cover 5.</p> |
