发明名称 |
FORMATION OF POLYIMIDE PATTERN LAYER AND RINSING SOLUTION USED FOR SAID FORMATION |
摘要 |
PURPOSE:To make the edge of a photoset polyimide pattern layer formed on a substrate roundish by immersing the substrate in a specified rinsing soln. for forming a photoset polyimide pattern layer to rinse the substrate and carrying out heat treatment at a high temp. CONSTITUTION:A photosensitive polyimide layer on a substrate is patternwisely photoset by exposure and the unexposed part is removed with a developing soln. to carry out development. The substrate 1 having a formed photoset polyimide pattern layer 2 is rinsed by immersion in a rinsing soln. for forming a photoset polyimide pattern layer contg. 5-30vol.% prim. aliphat. amino compd. and 2-20vol.% aprotic basic solvent. The substrate 1 is then heat-treated at a high temp. The peripheral part of the pattern layer 2 is inclined to the substrate 1 and the corner is made roundish, so the breaking of a wire on the pattern layer is prevented when a multilayered circuit board is produced. |
申请公布号 |
JPH01221741(A) |
申请公布日期 |
1989.09.05 |
申请号 |
JP19880045778 |
申请日期 |
1988.03.01 |
申请人 |
UBE IND LTD |
发明人 |
NAKAJIMA KOHEI;NISHIO KAZUAKI;KOYAMA TOSHIYA |
分类号 |
G03F7/32;G03C5/00;G03F1/00;G03F7/40;H05K3/06 |
主分类号 |
G03F7/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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