发明名称 |
Multi state sensing of NAND memory cells by applying reverse-bias voltage |
摘要 |
A method and circuit for sensing multi states of a NAND memory cell by applying reverse bias voltage at a constant gate voltage, preferably zero volts, generating a memory cell current in response to the applied reverse P well bias, and sensing the memory cell state.
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申请公布号 |
US6166951(A) |
申请公布日期 |
2000.12.26 |
申请号 |
US19990370010 |
申请日期 |
1999.08.06 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
DERHACOBIAN, NARBEH;FANG, HAO;HAN, MICHAEL |
分类号 |
G11C11/56;G11C16/04;G11C16/26;(IPC1-7):G11C16/04 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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