| 摘要 |
PROBLEM TO BE SOLVED: To provide a film forming method in a plasma CVD apparatus, which suppresses the influence of a cleaning gas on TFTs and the growth of particles as well. SOLUTION: The film forming method comprises a step for carrying a transparent insulation substrate out of a reaction chamber 111 of a plasma CVD apparatus 101, self-cleaning the interior thereof with a cleaning gas, forming a silicon nitride film on the inner wall of the reaction chamber 111, forming an amorphous silicon film thereon, and forming a silicon nitride film thereon, thereby making TFT characteristics satisfactory and suppressing the number of particles.
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