WATER PURGE AGENT, AND METHOD FOR RESIST PATTERN FORMATION USING THE SAME

摘要

This invention provides a water purge agent and a method for resist pattern formation using the same that can reduce defects in a liquid immersion lithographic process. The method for resist pattern formation by a liquid immersion lithographic process comprises, prior to heating after exposure and before development, removing water adhered to the surface of a wafer subjected to liquid immersion exposure by a water purge agent containing at least a nonaqueous solvent. The water purge agent is used for removing water for exposure in a liquid immersion lithographic process and contains a nonaqueous solvent.