LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME

摘要

A light emitting element (100) comprises a light emitting layer portion (24) having a double heterostructure where an n-type clad layer (4), an active layer (5) and a p-type clad layer (6) each composed of AlGaInP are laminated in this order, and a light take-out side electrode (9) formed to partially cover the first major surface of a bonding object layer (50) determined such that the first major surface side becomes p-type and the second major surface side becomes n-type. An n-type transparent element substrate (90) composed of a III-V compound semiconductor having a band gap energy higher than that of the active layer (5) is bonded to the second major surface of the bonding object layer (50). On one of the transparent element substrate and the bonding object layer (50), a surface to be bonded to the other is formed, and an InGaP intermediate layer (3) having a high concentration Si-doped layer (3d) formed by enriching Si to be an n-type dopant on the bonding surface side is formed. A light emitting element in which element series resistance is reduced sufficiently on the bonding interface and its switching is enhanced even when the bonding surface side of the light emitting layer and the transparent conductive semiconductor substrate becomes n-type and the InGaP intermediate layer formed on the bonding surface side is rendered n-type by Si doping is thereby provided.