| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing malfunction of a switching device, even if a high breakdown voltage electric power integrated circuit is exposed to a transitional voltage noise at transition from a conducting state to a non-conducting state or transition from the non-conducting state to the conducting state of the switching device. SOLUTION: A high potential side power device driving circuit HD comprises a mask signal generating circuit 18 for making on/off status of two high breakdown voltages NMOS for level shift into an identical status without fail for a fixed time interval immediately after delivery of a signal for changing continuity of a switching device 12 so as to be able to remove exactly error signals generated with switching by a filter circuit 8, when the signal is delivered. COPYRIGHT: (C)2008,JPO&INPIT
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