| 发明名称 |
FERROELECTRIC THIN FILM, METAL THIN FILM, OR OXIDE THIN FILM, AND METHOD AND APPARATUS FOR PRODUCTION THEREOF; AND ELECTRONIC AND ELECTRIC DEVICES USING THIN FILM |
| 摘要 |
PROBLEM TO BE SOLVED: To allow a ferroelectric thin film, which has a composition most suitable for obtaining good remnant polarization characteristics and also has a bismuth-based layered crystal structure with high reliability, to be formed with excellent controllability and reproducibility. SOLUTION: A ferroelectric thin film, which has a layered crystal structure and a composition formula of SrBi<SB>y</SB>Ta<SB>2</SB>O<SB>9±d</SB>or Sr<SB>x</SB>Bi<SB>y</SB>(Ta, Nb)<SB>2</SB>O<SB>9±d</SB>, is formed. In the formula, x is greater than or equal to 0.60 and smaller than 1.00, y is greater than 2.00 and smaller than or equal to 2.50, and d is greater than or equal to 0 and smaller than or equal to 1.00: the carbon content is 5 to 20% of 30 to 40 at.%. COPYRIGHT: (C)2008,JPO&INPIT
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| 申请公布号 |
JP2008211206(A) |
申请公布日期 |
2008.09.11 |
| 申请号 |
JP20080031178 |
申请日期 |
2008.02.12 |
| 申请人 |
WATANABE SHOKO:KK;TSUDA MASAYUKI |
发明人 |
YAMOTO HISAYOSHI;TSUDA MASAYUKI;KUSUHARA MASAKI;UMEDA MASARU;FUKAGAWA MITSURU |
| 分类号 |
H01L21/314;C23C16/40;C23C16/448;H01L21/02;H01L21/316;H01L21/822;H01L21/8246;H01L27/04;H01L27/105;H01L27/115 |
主分类号 |
H01L21/314 |
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