MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of removing a deposited film in a processing chamber, while using a chemical reaction and reducing metal contamination giving adverse effects on the manufacturing of a semiconductor device, and to provide a manufacturing method of a semiconductor device. SOLUTION: The substrate processing apparatus is provided with a processing chamber for processing a substrate; a gas supply section for supplying a gas into the processing chamber; a support pedestal for supporting the substrate in the processing chamber; and a plate to be disposed around the substrate in processing the substrate. At least either the support pedestal or the plate has a built-in electrode for turning the gas to be supplied from the gas supply portion into a plasma. COPYRIGHT: (C)2008,JPO&INPIT