| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor device capable of suppressing a gain during operation in a back off region, which is well applied to a peak amplifier. SOLUTION: On a lower side electron travel layer (3) of compound semiconductor material, a lower side electron supply layer (4) is arranged which is doped in n-type and comprises a compound semiconductor material whose electron affinity is smaller than that of the lower side electron travel layer. On the lower side electron supply layer, an upper side electron travel layer (5) is arranged which comprises a compound semiconductor material whose doping concentration is lower than that of the lower electron supply layer otherwise no doping is applied. On the upper side electron travel layer, an upper side electron supply layer (7) is arranged which comprises an n-type compounds semiconductor material whose electron affinity is smaller than the upper side electron travel layer. On the upper side electron supply layer, a source electrode and a drain electrode are arranged that are separate from each other and are connected ohmic to the lower side electron travel layer and the upper side electron travel layer. Between the source electrode and the drain electrode, a gate electrode is arranged on the upper side electron supply layer. COPYRIGHT: (C)2008,JPO&INPIT
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