MEMORY CELL ARRAY AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME

摘要

A memory cell Array capable of accurately sensing data and a semiconductor memory device including the same are provided to boost the bit lines by changing the capacitance of a capacitor by diversifying the capacitance of the capacitors combined in bit lines bit lines. A first sub memory cell array(110) is activated in response to a first word line enable signal. A second sub memory cell array(120) is activated in response to the second word line enable signal. The first bit line and the second bit line are precharged to sense amplifier and bit line precharge circuit(130). The sense amplifier and bit line precharge circuit amplify the first sub memory cell array and data outputted from the second sub memory cell array. Second bit lines are boosted as the first capacitor in response to the first word line enable signal. First bit lines are boosted as the second capacitor in response to the second word line enable signal.