| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light-receiving element capable of reducing dark current.SOLUTION: A method for manufacturing a semiconductor light-receiving element includes the processes: forming a substrate product including semiconductor mesas 25a, 25b, 25c for the semiconductor light-receiving element by performing, using a mask on a semiconductor laminate provided on a main surface of a substrate 11, etching on the semiconductor laminate; forming, on the substrate product, deposit including silicon from a silicon source GSI by supplying the silicon source GSI to the substrate product without supplying an oxygen source in addition to the silicon source GSI; and making a passivation film 27 grow on the substrate product SP3. The semiconductor mesas 25a, 25b, 25c include a light-receiving layer 15a having a superlattice structure. The superlattice structure includes a first III-V compound semiconductor layer including gallium and antimony as constituent elements and a second III-V compound semiconductor layer.SELECTED DRAWING: Figure 3 |
