| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of providing a stable electric property and high reliability to the semiconductor device using an oxide semiconductor.SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: forming a first insulating film; forming a source electrode and a drain electrode, and an oxide semiconductor flim which electrically connects the source electrode and the drain electrode; removing hydrogen atoms in the oxide semiconductor film by subjecting the oxide semiconductor film to heat treatment; supplying oxygen atoms into the oxide semiconductor film by subjecting the oxide semiconductor film from which the hydrogen atoms are removed to oxygen doping treatment; forming a second insulating film on the oxide semiconductor film to which the oxygen atoms are supplied; and forming a gate electrode in a region superimposed on the oxide semiconductor film on the second insulating film.SELECTED DRAWING: Figure 2 |
