Apparatus and methods for controlling gas flows in a HVPE reactor

摘要

Apparatus and methods for controlling gas flows in a HVPE reactor. Gas flows may be controlled by a gas focusing element. Gas injection and gas collection tubes are positioned within an outer tube and are separated from each other to define a space there between. A gas, such as HCl gas, flows over the outer surfaces of the injection and collection tubes to contain gases within the space as they flow from the injection tube to the collection tube and over a seed upon which group III nitride materials are grown. Gas flows may also be controlled by a multi-tube structure that separates gases until they reach a grown zone. A multi-tube structure may include four tubes, which separate flows of a halide reactive gas, a reaction product that flows with a carrier gas, and ammonia.

主权项

1. A hydride vapor phase epitaxy (HVPE) crystal growth reactor apparatus that provides for the growth of group III-nitride materials comprising:
a crystal growth chamber that includes an outer reactor tube made of quartz; a seed holder supported inside the outer reactor tube, the seed holder including a top surface that defines a cavity in which a seed is positioned; a protective flexible material liner applied over the top surface of the seed holder, the protective flexible material liner defining a window that generally corresponds to a shape and size of the cavity defined by the top surface of the seed holder; a storage roll from which the protective flexible material liner or a portion thereof is unrolled; and a take-up roll onto which the protective flexible material liner or a portion thereof is rolled after a growth of group III-nitride material in which the protective flexible material liner collected a parasitic deposit of the group III-nitride material.