Multilayer dielectric structures with graded composition for nano-scale semiconductor devices

摘要

Multilayer dielectric structures are provided with graded composition. For example, a multilayer dielectric structure includes a stack of dielectric films, wherein the dielectric films include at least a first SiCNO (silicon carbon nitride oxide) film and a second SiCNO film. The first SiCNO film has a first composition profile of C, N, and O atoms. The second SiCNO film has a second composition profile of C, N, and O atoms, which is different from the first composition profile of C, N, and O atoms. The composition profiles of C, N and/or O atoms of the constituent dielectric films of the multilayer dielectric structure are customized to enhance or otherwise optimize one or more electrical and/or physical properties of the multilayer dielectric structure.

主权项

1. A semiconductor structure, comprising:
a multilayer dielectric structure comprising a stack of dielectric films, wherein the dielectric films comprise at least a first SiCNO (silicon carbon nitride oxide) film and a second SiCNO film; wherein the first SiCNO film comprises a first composition profile of C, N and O atoms; wherein the second SiCNO film comprises a second composition profile of C, N and O atoms; wherein the first and second composition profiles are different; and wherein a total thickness of the multilayer dielectric structure is about 10 nanometers or less.