Optical system for a microlithographic projection exposure apparatus and microlithographic exposure method

摘要

The invention relates to an optical system for a microlithographic projection exposure apparatus, and to a microlithographic exposure method. An optical system for a microlithographic projection exposure apparatus comprises at least one mirror arrangement having a plurality of mirror elements, wherein these mirror elements can be adjusted independently of one another for changing an angular distribution of the light reflected by the mirror arrangement, and a polarization-influencing optical arrangement which is arranged downstream of the mirror arrangement in the light propagation direction, wherein the polarization-influencing optical arrangement reflects a light beam incident on the arrangement in at least two reflections, which do not occur in a common plane, for at least one angular distribution of the light reflected by the mirror arrangement.

主权项

1. An optical system, comprising:
a mirror arrangement comprising a plurality of mirror elements which are independently adjustable to change an angular distribution of light reflected by the mirror arrangement during use of the optical system; and a polarization-influencing optical arrangement downstream of the mirror arrangement along a path that light follows through the optical system during use of the optical system, wherein:
the optical system is a microlithographic optical system;the optical system is configured so that, during use of the optical system:
for an angular distribution of light reflected by the mirror arrangement, the polarization-influencing optical arrangement reflects a light beam incident on the polarization-influencing arrangement in at least two reflections which do not occur in a common plane;the at least two reflections of the light beam comprise a first reflection of the light beam and a second reflection of the light beam;the first reflection of the light beam occurs in a first plane; andthe second reflection of the light beam occurs in a second plane which is non-parallel to the first plane.